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| r07ds0704ej0100 rev.1.00 page 1 of 22 apr 26, 2012 preliminary data sheet ? pd166017t1f intelligent power device 1. overview 1.1 description ? pd166017 is a single 6 m ? n-channel high-side driver in space saving to-252 package. the device has many integrated features to enable the successful design of high side load control circuits. 1.2 features ? low on-state resistance: 6 m ? (max. at 25c) ? small package: jedec 5-pin to-252 ? built-in charge pump ? short circuit protection ? shutdown by over current detection and over load detection ? over temperature protection ? shutdown with auto-restart on cooling ? built-in diagnostic function ? proportional load current sensing ? defined fault signal in case of abnormal load condition ? under voltage lock out ? reverse battery protection by self turn on of n-ch mosfet ? aec-q100 qualified ? rohs compliant with pure tin plating 1.3 application ? incandescent light bulb (55 w to 65 w) switching with pwm control ? switching of all types of 14 v dc grounded loads, such as led lighting, resistive heating elements, inductive and capacitive loads. ? replacement of fuse and relay 2. ordering information part no. lead plating packing package ? pd166017t1f-e1-ay * 1 pure mate sn tape 2500 p/reel 5-pin to-252 (mp-3zk) note: * 1 pb-free (this product does not contain pb in the ex ternal electrode.). msl: 3, profile acc. j-std-20c note: the information contained in this document is the one that was obtained when the document was issued, and may be subject to change. r07ds0704ej0100 rev.1.00 apr 26, 2012
? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 2 of 22 apr 26, 2012 3. specification 3.1 block diagram out is in r is load 4 1 & 5 3 & tab v out i cc v cc v on v is i is il v in i in v cc - v in v cc 2 charge pump current sense output voltage sense power supply voltage sense temperature sensor current detector esd protection fault signal output internal power supply esd protection control logic 3.2 pin arrangement 1 tab (top view) 2345 out in v cc is out 3.2.1 pin function pin no. pin name pin function recommended connection 1 out output to load pin 1 and pin 5 must be externally shorted 2 in activates the output, if it shorted to ground if reverse battery protection feature is used, refer to "power dissipation under reverse battery condition" 3/tab v cc supply voltage: tab and pin 3 are internally shorted connected to battery voltage with small 100 nf capacitor in parallel 4 is sense output, diagnostic feedback if current sense and diagnostic feature are not used, connected to gnd via resistor 5 out output to load pin 1 and pin 5 must be externally shorted ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 3 of 22 apr 26, 2012 3.3 absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol rating unit test conditions v cc voltage v cc1 28 v v cc voltage under load dump condition v cc2 42 v r i = 1 ? , r l = 1.5 ? , r is = 1 k ? , t d = 400 ms v cc voltage at reverse battery condition ?v cc ?16 v r l = 1.5 ? , 1 min. load current (short circuit current) i l(sc) self limited a total power dissipation for whole device (dc) p d 1.2 w t a = 85c, device on 50 mm ? 50 mm ? 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 ? m copper area v cc ? 28 dc voltage of in pin v in v cc + 14 v at reverse battery condition, t < 1 min. v cc ? 28 dc voltage of is pin v is v cc + 14 v at reverse battery condition, t < 1 min. inductive load switch-off energy dissipation single pulse e as1 50 mj v cc = 12 v, i l = 10 a, t ch,start < 150c maximum allowable energy dissipation at shutdown operation e as2 105 mj v cc = 18 v, t ch,start < 150c, l supply = 5 ? h, l short = 15 ? h channel temperature t ch ?40 to +150 c dynamic temperature increase while switching ? t ch 60 c storage temperature t stg ?55 to +150 c 2000 v hbm aec-q100-002 std. r = 1.5 k ? , c = 100 pf esd susceptibility v esd 200 v mm aec-q100-003 std. r = 0 ? , c = 200 pf note: all voltages refer to ground pin of the device. 3.4 thermal characteristics parameter symbol min. typ. max. unit test conditions r th(ch-a) ? 45 ? c/w device on 50 mm ? 50 mm ? 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 ? m copper area thermal characteristics r th(ch-c) ? 1.7 ? c/w ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 4 of 22 apr 26, 2012 3.5 electrical characteristics 3.5.1 operation function (t ch = 25c, v cc = 12 v, unless otherwise specified) parameter symbol min. typ. max. unit test conditions required current capability of input switch i ih ? 1.4 3.0 ma input current for turn-off i il ? ? 50 ? a t ch = ?40 to 150c ? ? 0.5 r l = 1.0 ? , i in = 0 a, t ch = 25c ? ? 15 r l = 1.0 ? , i in = 0 a, t ch = 125c standby current i cc(off) ? ? 50 ? a r l = 1.0 ? , i in = 0 a, t ch = ?40 to 150c ? 4.7 6.0 i l = 15 a, t ch = 25c on state resistance r on ? 7.9 10.5 m? i l = 15 a, t ch = 150c turn on time t on ? 170 500 ? s turn off time t off ? 220 600 ? s r l = 1.0 ? , t ch = ?40 to 150c, refer to "measurement condition" slew rate on * 1 dv/dton ? 0.2 0.6 v/ ? s 25 to 50% v out , r l = 1.0 ? , t ch = ?40 to 150c, refer to "measurement condition" slew rate off * 1 ?dv/dtoff ? 0.2 0.5 v/ ? s 50 to 25% v out , r l = 1.0 ? , t ch = ?40 to 150c, refer to "measurement condition" note: * 1 not tested, specified by design ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 5 of 22 apr 26, 2012 3.5.2 protection function (t ch = 25c, v cc = 12 v, unless otherwise specified) parameter symbol min. typ. max. unit test conditions ? 5.4 7.0 t ch = 25c on-state resistance at reverse battery condition * 1 r on(rev) ? 8.9 12.3 m? t ch = 150c v cc = ?12 v, i l = ?7.5 a, r is = 1 k ? ? 40 130 t ch = ?40c 20 35 ? t ch = 25c i l6,3(sc) 10 25 ? t ch = 150c v cc = 6 v, v on = 3 v ? 30 100 t ch = ?40c ? 25 ? t ch = 25c i l6,6(sc) * 1 5 20 ? t ch = 150c v cc = 6 v, v on = 6 v ? 155 240 t ch = ?40c 76 135 ? t ch = 25c i l12,3(sc) * 1 40 95 ? t ch = 150c v cc = 12 v, v on = 3 v ? 130 230 t ch = ?40c ? 110 ? t ch = 25c i l12,6(sc) * 1 30 80 ? t ch = 150c v cc = 12 v, v on = 6 v ? 109 180 t ch = ?40c ? 95 ? t ch = 25c i l12,12(sc) * 1 10 76 ? t ch = 150c v cc = 12 v, v on = 12 v ? 185 250 t ch = ?40c ? 160 ? t ch = 25c i l18,3(sc) * 1 50 120 ? t ch = 150c v cc = 18 v, v on = 3 v ? 153 220 t ch = ?40c ? 133 ? t ch = 25c i l18,6(sc) * 1 50 100 ? t ch = 150c v cc = 18 v, v on = 6 v ? 112 170 t ch = ?40c ? 98 ? t ch = 25c i l18,12(sc) * 1 30 73 ? t ch = 150c v cc = 18 v, v on = 12 v ? 92 140 t ch = ?40c ? 80 ? t ch = 25c short circuit detection current i l18,18(sc) * 1 5 64 ? a t ch = 150c v cc = 18 v, v on = 18 v turn-on check delay after input current positive slope t d(oc) 0.9 2.1 3.8 ms t ch = ?40 to 150c remaining turn-on check delay after turn-on time t d(oc) ?t on 0.65 1.9 ? ms r l = 1.0 ? , t ch = ?40 to 150c over load detection voltage 1 v on(ovl)1 0.45 0.65 0.90 v t ch = ?40 to 150c over load detection voltage 2 v on(ovl)2 0.20 0.30 0.50 v t ch = ?40 to 150c ? ? 5.8 t ch = ?40c 3.6 4.5 5.4 t ch = 25c under voltage shutdown v cin(uv) 3.2 ? ? v t ch = 150c ? ? 6.5 t ch = ?40c 4.1 5.1 6.0 t ch = 25c under voltage restart of charge pump v cin(cpr) 3.7 ? ? v t ch = 150c output clamp voltage (inductive load switch off) v on(cl) 37 48 62 v i l = 40 ma, t ch = ?40 to 150c thermal shutdown temperature * 1 t th 150 175 ? c thermal hysteresis * 1 ? t th ? 10 ? c note: * 1 not tested, specified by design ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 6 of 22 apr 26, 2012 3.5.3 diagnosis function (t ch = 25c, v cc = 12 v, unless otherwise specified) parameter symbol min. typ. max. unit test conditions k ilis = i l /i is , i is < i is,lim 15600 19000 22500 t ch = ?40c 16100 19100 22300 t ch = 25c 16500 19200 22000 t ch = 150c i l = 20 a 14200 18800 24100 t ch = ?40c 15100 18800 22900 t ch = 25c 16300 19000 22500 t ch = 150c i l = 10 a 10100 19000 34400 t ch = ?40c 12200 19000 28200 t ch = 25c current sense ratio k ilis 14400 19000 23500 t ch = 150c i l = 4.0 a sense current offset current i is,offset ? ? 60 ? a v in = 0 v, i l = 0 a sense current under fault condition i is,fault 3.5 6.0 12.0 ma under fault conditions, 8 v < v cc ? v is < 12 v, t ch = ?40 to 150c sense current saturation current i is,lim 2.5 5.0 8.4 ma v is < v out ? 6 v, t ch = ?40 to 150c fault sense signal delay after short circuit detection * 1 t sdelay(fault) ? 2 6 ? s t ch = ?40 to 150c sense current leakage current i is(ll) ? ? 0.5 ? a i in = 0 a, t ch = ?40 to 150c current sense settling time to i is (static) after input current positive slope * 1 t son(is) ? ? 700 ? s t ch = ?40 to 150c, r l = 1.0 ? , i is = 85% k ilis current sense settling time during on condition * 1 t sic(is) ? 50 100 ? s t ch = ?40 to 150c, i l = 10 a 20 a note: * 1 not tested, specified by design ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 7 of 22 apr 26, 2012 3.6 function description 3.6.1 driving circuit the driver output turns on, when the input pin is connected to ground through a low impedance path allowing a current of i ih . the driver output turns off, when the input current gets below i il . for input pin control circuit design when active reverse battery connection is needed, refer to paragraph 3.6.3. r cc is 100 ? typ. esd protection diode: 46 v typ. i in v out v cc 0 0 t on on off off in v cc v z,in i in zd r cc logic i in i l v cc switching a resistive load switching lamps v out t 0 i is i l v out i is i is,iim i in 0 0 0 0 0 0 0 t ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 8 of 22 apr 26, 2012 switching an inductive load v on(cl) v cc 0 0 0 0 i in i l v out i is t avalanche behavior at inductive load switch off when an inductive load is switched off, the power mos portion goes into avalanche behavior. maximum allowable energy in avalanche behavior is specifi ed in "absolute maximum ratings" as e as1 . the energy dissipation for an inductive load switch-off single pulse in device (e as1 ) is estimated by the following formula as r l = 0 ? . ? i 2 ? l 1 2 v on(cl) v on(cl) ? v cc e as1 = ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 9 of 22 apr 26, 2012 3.6.2 short circuit protection case 1: i in pin is shorted to ground in an overload condition, which includes a short circuit condition. the device shuts down automatically when either or both of following conditions (a, b) are detected. the sense current is fixed at i is,fault . shutdown is latched until the next reset via input. (a) i l > i l(sc) (b) v on > v on(ovl)1 after t d(oc) case 1-(a) i l > i l(sc) t sdelay(fault) v cc i l(sc) v out v on short circuit detection depending on the external impedance (evaluation circuit) t sdelay(fault) : fault sense signal delay after short circuit detection i l(sc) : short circuit detection current i is,fault v bat 0 0 0 0 i in i l v out /v cc i is t v cc v in r is r l v out v on v is v bat in out is i in i is i l : cable impedance typical short circuit detect ion current characteristics the short circuit detection current i l(sc) changes according to v cc voltage and v on voltage for the purpose of strengthening the robustness under short circuit conditions. 0 30 60 90 120 150 180 5101520 v on = 3 v v on = 6 v v on = 12 v 0 20 40 60 80 100 120 140 160 0 5 10 15 20 v on [v] v cc -v in [v] i l(sc) [a] i l(sc) [a] ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 10 of 22 apr 26, 2012 v cc i l(sc) v out v on(ovl)1 v bat v on t d(oc) : turn-on check delay after input current positive slope 0 0 0 0 t d(oc) short circuit detection i is,fault i in i l v out /v cc i is t depending on the external impedance (evaluation circuit) v cc v in r is r l v out v on v is v bat in out is i in i is i l : cable impedance case 1-(b) v on > v on(ovl)1 after t d(oc) ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 11 of 22 apr 26, 2012 case 2: short circuit during on-condition the device shuts down automatically when the following condition (a) is detected. detection of value (a) is activated after v on < v on(ovl)2 with hysteresis between detection (a) va lue and activation of (a) value. the sense current is fixed at i is,fault . shutdown is latched until the next reset via input. (a) v on > v on(ovl)2 after v on < v on(ovl)2 short circuit in in out out v cc i l(sc) v out v on(ovl)2 v on(ovl)2 v on(ovl)2 v cc v cc v on(ovl)1 v on(ovl)1 t d(oc) : turn-on check delay after input current positive slope 0 0 0 0 short circuit detection i is,fault i l v out t depending on the external impedance (evaluation circuit) v in v is t sdelay(fault) t d(oc) t d(oc) t d(oc) v cc v in r is r l v out v on v is v bat in out is i in i is i l : cable impedance t sdelay(fault) : fault sense signal delay after short circuit detection i l(sc) : short circuit detection current case 2-(a) v on > v on(ovl)2 after v on < v on(ovl)2 shutdown shutdown ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 12 of 22 apr 26, 2012 over-temperature protection the output is switched off if over-temperature is detected. the device switches on again automatically after it cools down. 0 0 0 t th t th i is,fault i in v out t ch t i is ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 13 of 22 apr 26, 2012 3.6.3 power dissipation under reverse battery condition in case of a reverse voltage is applied to the device, the n-ch mosfet will turn on only if a reverse current can flow from in pin through r cc and if |v cc ? v in | voltage is in range of 8 v (typ). in above conditions, power dissipation in the driv er is generated by n-ch mosfet as well as r cc and r is0 . the power dissipation in the n-ch mosfet depends on the load condition. overall power dissipation p d(rev) can be calculated as follow. p d(rev) = r on(rev) i l(rev) 2 + (v cc - v f ? i in(rev) r in ) i in(rev) + (v cc ? i is(rev) r is ) i is(rev) i in(rev) = (v cc ? 2 v f ) / (r cc + r in ) i is(rev) = (v cc ? v f ) / (r cc + r is0 + r is ) thereverse current through the n-ch mosfet has to be limited by the connected load. in order to turn on the n-ch mosfet at reverse polarity condition, the voltage at in should be around 8v by using a mosfet or small diode in parallel to the input switch. r in should be estimated using the following formula. r in <(|v cc -8v|)/0.08a in -vcc r cc r in r is r l is out i in(rev) i is(rev) i l(rev) r is0 n-ch mosfet in case no current would flow from in pin through r cc , the n-ch mosfet will not turn-on. then power dissipation mainly result from the body diode of the n-ch mosfet. 3.6.4 device behavior at low voltage condition if the supply voltage (v cc ? v in ) drops below v cin(uv) , the device will shut off and will remain off until the supply voltage (v cc ? v in ) recovers above v cin(cpr) . vbat 0 0 0 v cc ? v in v out v cin(uv) v cin(cpr) i in i l t v out /v cc ? v in ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 14 of 22 apr 26, 2012 3.6.5 current sense output i is,lim i l,lim i is,offset k ilis = i l /i is v is ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 16 of 22 apr 26, 2012 3.7 package drawings (unit: mm) 3.7.1 5-pin to-252 (mp-3zk) 6.50.2 2.30.1 0.50.1 0.60.1 0 to 0.25 0.508 5.0 typ. 1.0 typ. 6.10.2 1.520.12 0.50.1 4.0 min. (4.4 typ.) 0.8 10.3 max. (9.8 typ.) 4.3 min. 1 6 2345 1.14 gauge plane seating plane no plating area note ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 17 of 22 apr 26, 2012 3.8 taping information this is one type (e1) of directi on of the device in the career tape. draw-out side ?e1 type 3.9 marking information this figure indicates the marking items and arrangement. ho wever, details of the letterform, the size and the position aren?t indicated. 66017 pb-free plating marking internal administrative code lot code *1 week code (2 digit number) year code (last 1 digit number) note: *1. composition of the lot code ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 18 of 22 apr 26, 2012 4. typical characteristics required current capability of input switch vs. ambient temperature 0 0.5 1 1.5 2 2.5 ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c i ih - required current capability of input switch - ma input current for turn off vs. ambient temperature i il - input current for turn-off - a 0 100 200 300 400 500 ?50 0 50 100 150 200 t a - ambient temperature - c standby current vs. ambient temperature i cc(off) - standby current - a r on - on-state resistance - m ?10 0 10 20 30 40 50 r on - on-state resistance - m on state resistence vs. v cc ? v in voltage on state resistence vs. ambient temperature v cc ? v in - v 0 2 4 6 8 10 12 14 01 5 10 5 r on(rev) - on-state resistance at reverse battery condition - m ?50 0 50 100 150 200 t a - ambient temperature - c 0 1 2 3 4 5 6 7 8 9 on state resistence at reverse battery condition vs. ambient temperature 0 1 2 3 4 5 6 7 8 9 10 ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 19 of 22 apr 26, 2012 0 100 200 300 400 500 slew rate on vs. ambient temperature slew rate off vs. ambient temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 sense current offset current vs. ambient temperature 0 1 2 3 4 5 6 ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c t on - turn-on time - s 0 100 200 300 400 500 ?50 0 50 100 150 200 t a - ambient temperature - c t on - turn-off time - s i is,offset - sense current offset current - a v cc ? v in = 6 v 12 v 18 v v cc ? v in = 6 v 12 v 18 v turn on time vs. ambient temperature turn off time vs. ambient temperature dv/dton - slew rate on - v/ s 0 0.1 0.2 0.3 0.4 0.5 0.6 ?dv/dtoff - slew rate off - v/ s ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 20 of 22 apr 26, 2012 0 1 2 3 4 5 6 7 under voltage shutdown vs. ambient temperature under voltage restart of charge pump vs. ambient temperature 0 1 2 3 4 5 6 sense current under fault condition vs. ambient temperature 0 2 4 6 8 10 12 ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c i is,lim - sense current saturation current - ma i is,fault - sense current under fault condition - ma sense current saturation current vs. ambient temperature v cin(uv) - under voltage shutdown - v 0 1 2 3 4 5 6 v cin(cpr) - under voltage restart of charge pump - v ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 21 of 22 apr 26, 2012 5. thermal characteristics transient thermal resistance vs. pulse width 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 pw - pulse width - s r th(t) - transient thermal resistance - c/w device on 50 mm 50 mm 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 m copper area r th(ch-a) = 45.0c/w r th(ch-c) = 1.7c/w ? pd166017t1f preliminary r07ds0704ej0100 rev.1.00 page 22 of 22 apr 26, 2012 6. application example in principle is in out load pd166017 ris micro. gnd adc port 5v output port r r r * 1 * 2 vbat out v cc notes: *1 a free wheel diode is necessary if one of be low conditions is fulfilled: a. ? pd166017 is driving an inductive load and the energy dissipated in the driver during avalanche mode may exceed e as1 . b. the energy that may be dissipated at device turn-off in any type of load condition (i.e: nominal or overload) exceed e as2 . it is recommended that user carefully consider the harness conditions in the target application. *2 when no freewheel diode is used in parallel to the driver load and to prevent oscillation of the v cc voltage during turn-off at high load current, a snu bber [r,c] circuit must be connected between v cc and gnd as shown on application schematic. recommended value of r: 10 ? / 5% 0, 125 w recommended value of c: 0.25 ? f / 50 v ceramic capacitor all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ? pd166017t1f data sheet description rev. date page summary 1.00 apr 26, 2012 ? first edition issued notice 1. all information included in this document is current as of the date this document is issued. such information, however, is s ubject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology described in this document for any purpose rela ting to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 7. renesas electronics products are classified according to the following three quality grades: "standard", "high quality", an d "specific". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. you must check the quality grade of each renesas electronics produ ct before using it in a particular application. you may not use any renesas electronics product for any application categorized as "specific" without the prior written consent of renesas electronics. fu rther, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for an application categorized as "specific" or for which the product is not intended wh ere you have failed to obtain the prior written consent of renesas electronics. the quality grade of each renesas electronics product is "standard" unless otherwise expressly specified in a renesas electroni cs data sheets or data books, etc. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. 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(note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2012 renesas electronics corporation. all rights reserved. colophon 1.1 |
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